IndiumV3, Main, Repository, bibRecord, 00AC83

Solid-solution strengthening in ordered InxGa1-xP alloys

Identifieur interne : 00AC83 ( Main/Repository ); précédent : 00AC82; suivant : 00AC84

Solid-solution strengthening in ordered InxGa1-xP alloys

Auteurs : RBID : Pascal:04-0471698

Descripteurs français

Pascal (Inist)
- Durcissement solution solide, Méthode MOVPE, Accommodation réseau, Nanoindentation, Plasticité, Zone plasticité, Ecoulement plastique, Renforcement mécanique, Dureté, Semiconducteur, Gallium phosphure, Indium phosphure, Composé ternaire, InxGa1-xP, Ga In P, 6220Q, 6220F.

English descriptors

KwdEn :
- Gallium phosphides, Hardness, Indium phosphides, MOVPE method, Mismatch lattice, Nanoindentation, Plastic flow, Plasticity, Plasticity zone, Semiconductor materials, Solid solution hardening, Strengthening, Ternary compounds.

Abstract

Ordered In_xGa_1-xP alloys have been grown on to GaAs(001) substrates by metal-organic vapour-phase epitaxy. Lattice-matched compositions of alloys (In_xGa_1-xP with x0.5) were used in order to produce epitaxial layers free of structural defects (threading dislocations). Growth temperature and substrate orientation were adjusted to control the degree η, of order, of the alloys in the range 0.3-0.5. Nanoindentation tests were carried out to measure the mechanical response of the heteroepitaxial layers. Transmission electron microscopy was used to characterize the structure as well as the plastic zones generated into the specimen by nanoindentation. Comparison of the alloys with binary references (InP and GaP bare substrates) showed strengthening, with the hardness and flow-stress values that are much larger than those of InP and of the same order of magnitude as those of GaP.

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Pascal:04-0471698

Le document en format XML

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Ga<sub>1-x</sub>
P alloys</title>
<author><name sortKey="Le Bourhis, E" uniqKey="Le Bourhis E">E. Le Bourhis</name>
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<s2>86962 Chasseneuil</s2>
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<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Photonique et de Nanostructures, Unité Propre de Recherche associée au CNRS 20, route de Nozay</s1>
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<term>Composé ternaire</term>
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<front><div type="abstract" xml:lang="en">Ordered In<sub>x</sub>
Ga<sub>1-x</sub>
P alloys have been grown on to GaAs(001) substrates by metal-organic vapour-phase epitaxy. Lattice-matched compositions of alloys (In<sub>x</sub>
Ga<sub>1-x</sub>
P with x0.5) were used in order to produce epitaxial layers free of structural defects (threading dislocations). Growth temperature and substrate orientation were adjusted to control the degree η, of order, of the alloys in the range 0.3-0.5. Nanoindentation tests were carried out to measure the mechanical response of the heteroepitaxial layers. Transmission electron microscopy was used to characterize the structure as well as the plastic zones generated into the specimen by nanoindentation. Comparison of the alloys with binary references (InP and GaP bare substrates) showed strengthening, with the hardness and flow-stress values that are much larger than those of InP and of the same order of magnitude as those of GaP.</div>
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Ga<sub>1-x</sub>
P with x0.5) were used in order to produce epitaxial layers free of structural defects (threading dislocations). Growth temperature and substrate orientation were adjusted to control the degree η, of order, of the alloys in the range 0.3-0.5. Nanoindentation tests were carried out to measure the mechanical response of the heteroepitaxial layers. Transmission electron microscopy was used to characterize the structure as well as the plastic zones generated into the specimen by nanoindentation. Comparison of the alloys with binary references (InP and GaP bare substrates) showed strengthening, with the hardness and flow-stress values that are much larger than those of InP and of the same order of magnitude as those of GaP.</s0>
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Solid-solution strengthening in ordered InxGa1-xP alloys

Solid-solution strengthening in ordered InxGa1-xP alloys

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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